歡迎113級碩士班新生鄧仲崴、翁識傑、林炫宏加入
2024-08-28
歡迎112級碩士班新生張宇睿、李至麟、黃凱挺、杜東翰加入
2023-08-22
歡迎111級碩士班新生卞光豪、羅文鴻、邱互冠加入
2022-07-01
歡迎110級碩士班新生黃銓祥、許家維、嚴仕倫、楊嘉宇加入
2021-07-01
歡迎109級碩士班新生王挺軒、戴子傑加入
2020-07-01
歡迎108級碩士班新生林宇奐、朱世誠、吳冠慶加入
2019-07-01
科技部計畫 "利用氧化石墨烯電阻記憶體製備電子突觸元件"獲得通過
2018-09-18
歡迎107級碩士班新生林佑榮、宮佳豪、黃仲嘉加入
2018-07-01
國科會計畫 "改善氣氛環境對電阻式記憶體之劣化影響"獲得通過
2017-08-01
歡迎106級碩士班新生王宥琪、吳中慶加入
2017-07-01
歡迎105級碩士班新生遲萬瑋、翁照凱加入
2016-07-01
國科會計畫 "利用嵌入低介電結構和超臨界二氧化碳流體處理技術製作高效能鈦酸鍶鋇調變微波薄膜"獲得通過
2016-06-24
歡迎104級碩士班新生張煜軒、許孟仁加入
2015-07-01
歡迎103級碩士班新生楊志鵬、林盟崇加入
2014-07-01
國科會計畫 " 電化學式二氧化矽電阻式記憶體之切換特性與操作熱穩定性改善(III) " 獲得通過
2014-07-03
"Filament Formation in an Electrochemical SiO2-based Memory Device during the Forming Process" IEEE Electron Device Letters (SCI) (Accepted)
2014-06-06
科技部大專生研究計畫，白昌宗 “探討二氧化矽電阻式記憶體之路徑結構與分析” 獲得通過
2014-05-31
"Resistive Switching Characteristics of a SiOx Layer with CF4 Plasma Treatment " Journal of Nanomaterials (SCI) (Accepted)
2014-02-08
"Effect of Plasma Treatment of Resistive Layer on a Cu/SiOx/Pt Memory Device " Journal of Vacuum Science and Technology A (SCI) (Accepted)
2013-12-16
歡迎102級碩士班新生戴士展、江崑祺加入
2013-07-01
國科會計畫 " 電化學式二氧化矽電阻記憶體之切換特性與操作熱穩定性改善(II) " 獲得通過
2013-06-24
"Influence of Embedding Cu Nano-particles into a Cu/SiO2/Pt Structure on its Resistive Switching" Nanoscale Research Letters (SCI) (Accepted)
2013-03-23
"Simulation of the Transient Current of NiO Resistive Memory during the Switching Process by Using RC Circuit" Ferroelectrics (SCI) (Accepted)
2013-03-12
"Retention Failure Mechanism for Low-Resistance-States of Cu-doped SiO2 Resistive Memory" Ferroelectrics (SCI) (Accepted)
2013-03-12
"Unipolar Resistive Switching in a Transparent ITO/SiOx/ITO Sandwich Fabricated at Room Temperature" Solid State Communications (SCI) (Accepted)
2013-01-09