Ａ.國際期刊論文

54. Chih-Yi Liu*, Shih-Kun Liu, Chung-Chia Huang, Chao-Cheng Lin, and Chun-Hung Lai, “Analog resistive-switching property of Ni/TiOx/W structure,” Modern Physics Letters B, 36(18) 2242038, 2022.

53. Chih-Yi Liu*, Chao-Cheng Lin, Chun-Hung Lai, Shih-Kun Liu, Chang-Sin Ye, Wei-Chen Tien, and Meng-Ren Hsu, “Characteristics of GZO-based multilayer transparent conducting films,” International Journal of Modern Physics B, Vol. 35, Nos. 14~16, 2140004, 2021. (SCI).

52. Chih-Yi Liu*, Wan-We Chih, Chao-Kai Weng, Wei-Chen Tien and Chang-Sin Ye, “Effect of Ar-plasma treatment of ITO layer on resistive memory properties of a Ti/ITO point-contact structure. ” Modern Physics Letters B, 33, 1940042, 2019. (SCI).

51. Chih-Yi Liu*, Chun-Hung Lai, Chao-Cheng Lin and Chih-Peng Yang, “Insertion of a Graphene Oxide Layer into a Cu/SiO2/Pt Structure to Overcome Performance Degradation in a Vaporless Environment,” Applied Sciences, 9, 1432, 2019. (SCI).

50. Chih-Yi Liu*, Yu-Xuan Zhang, Chih-Peng Yang, Chun-Hung Lai, Min-Hang Weng, Chang-Sin Ye, and Chun-Kai Huang, “Effects of a Graphene Oxide (GO) Layer on the Resistive Memory Properties of a Cu/GO/SiO2/Pt Structure,”Sensors and Materials, 30(3), pp. 463-469, 2018.(SCI).

49. Shyh-Jer Huang*, Shen-Po Chang, Ricky W Chuang, Jian-Ting Lai, Yan-Kuin Su, Chih-Yi Liu, and Hsuwen Yang,Zi-Hao Wang, Jian-Long Ruan, and Cheng-Chung Lin, “GaN Submicron Rods on Graphene for Nonenzymatic Amperometric Sensing of Glucose,” Nanoscience and Nanotechnology Letters, 9 (10), pp. 1487- 1490, 2017. (SCI).

48. Chun-Hung Lai*, Hung-Wei Chen*, Chih-Yi Liu, “The Resistive Switching Characteristics in ZrO2 and its Filamentary,” Materials, 9,551,2016.(SCI).

47. Chih-Yi Liu*, Ming-Hsui Tsai, Mengh-Sin Wu, and Chun-Hung Lai, “Microwave dielectric properties of B2O3-added Li2MgTiO4 ceramics for LTCC  applications,” Integrated Ferroelectrics, 168, 25-35, 2016. (SCI).

46. Chih-Yi Liu*, Kun-Chi Chiang, and Chun-Hung Lai, “Resistive memory properties of an electrochemical SiO2-based device without an active electrode,”Journal of Vacuum Science and Technology A, 34, 02D102, 2016.(SCI).

45. Chih-Yi Liu* and Zheng-Yao Huang, “Effects of a CuxO Buffer Layer on a SiOx-Based Memory Device in a Vaporless Environment,” Nanoscale Research Letters, 10, 290, 2015. (SCI).

44. Chih-Yi Liu*, Zheng-Yao Huang, Chun-Hung Lai, “CF4 Plasma Treatment of Tungsten Bottom Electrode of Cu/SiOx/W Structure for Resistive Memory Applications,” Thin Solid Films, 584, 326–329, 2015. (SCI).

43. Chih-Yi Liu*, Chao-Han Lin, Shin-Hung Liu, Chang-Zong Bai, and Yu-Xuan Zhang, “Improvement of switching uniformity in Cu/SiO2/Pt resistive memory achieved by a voltage pre-stress,” Japanese Journal of Applied Physics, 54, 031801, 2015. (SCI).

42. Hung-Yu Wang*, Huu-Duy Tran, Quoc-Minh Nguyen, Li-Te Yin, and Chih-Yi Liu, “Derivation of Oscillators from Biquadratic and Pass Filters Using Circuit Transformations,” Applied Sciences, 4, 482-492, 2014. (SCI).

41. Chih-Yi Liu* and Chao-Han Lin, “Filament Formation in an Electrochemical SiO2-based Memory Device during the Forming Process,” IEEE Electron Device Letters, 35(8), 829-831, 2014. (SCI).

40. Wen-Chung Huang, Hung-Yu Wang*, Nan-Hui Chiang, Tsair-Fwu Lee, and Chih-Yi Liu, “Constructing pathological non-ideal active device models using mirror  cells,” International Journal of Electronics Letters, 4. 1-15, 2014.

39. Chih-Yi Liu*, Yueh-Ying Tsai, and Chun-Hung Lai, “Effect of Plasma Treatment of Resistive Layer on a Cu/SiOx/Pt Memory Device”Journal of Vacuum  Science and Technology A,32(2), 02B111, 2014. (SCI).

38. Chih-Yi Liu*, Yueh-Ying Tsai, Wen-Tsung Fang and Hung-Yu Wang, “Resistive Switching Characteristics of a SiOx Layer with CF4 Plasma Treatment,”  Journal of Nanomaterials, 2014, 703463, 2014. (SCI).

37. Chun-Hung Lai, Chih-Yi Liu*, and Hsuwen Yang, “Bipolar Resistance Switching Characteristics in Zirconium Oxide,” Ferroelectrics, 457, 146–152, 2013. (SCI).

36. Chun-Hung Lai, Chih-Yi Liu*, “Direct current voltage sweep and alternating current impedance analysis of SrZrO3 memory device in ON and OFF states,”  Applied Physics Letters, 103, 263505, 2013. (SCI).

35. Chih-Yi Liu*, Bing-Guang Tsai, and Min-Hang Weng, and Shyh-Jer Huang, “Influence of B2O3 Additive on Microwave Dielectric Properties of Li2ZnTi3O8 Ceramics for LTCC Applications”International Journal of Applied Ceramic Technology, 10 (S1), E49–E56, 2013. (SCI).

34. Chih-Yi Liu*, Chao-Han Lin, Jyun-Jie Huang, and Jen-Yen Ho, “Simulation of the Transient Current of NiO Resistive Memory during the Switching Process,” Ferroelectrics, 451, 90-95, 2013.(Accepted) (SCI)

33. Chih-Yi Liu*, Yueh-Ying Tsai,Shih-Kun Liu, and Yung-Hung Huang, “Retention Failure Mechanism for Low-Resistance-States of Cu-doped SiO2 Resistive Memory”Ferroelectrics (Accepted) (SCI)

32. Wei-Chun Lin, Hung-Yu Wang*, Chih-Yi Liu, Tsair-Fwu Lee, “Symbolic analysis of active device containing differencing voltage or current characteristics,” Microelectronics Journal, 44, 354-358, 2013.(SCI)

31. Chih-Yi Liu*, Jyun-Jie Huang, Chun-Hung Lai, and Chao-Han Lin, “Influence of Embedding Cu Nano-particles into a Cu/SiO2/Pt Structure on its Resistive Switching,” Nanoscale Research Letters, 8, 156, 2013 (SCI)

30. Chih-Yi Liu*, Ya-Ru Shih, and Shyh-Jer Huang, “Resistive Switching Characteristics of a Transparent ITO/SiO2/ITO Structure Fabricated at Room Temperature” Solid State Communications, 159, 13-17, 2013.(SCI)

29. Chun-Hung Lai*, Chih-Yi Liu, Cheng-Hsing Hsu, Yi-Mu Lee, Jenn-Sen Lin, and Hsiwen Yang “Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin film” Thin Solid Films,529, 430-434, 2013 (SCI)

28. Chih-Yi Liu*, Jyun-Jie Huang, and Chun-Hung Lai, “Resistive Switching Characteristics of a Pt Nanoparticle-Embedded SiO2-based Memory,” Thin Solid Films,529,107-110, 2013.(SCI)

27. Chun-Hung Lai*, Yi-Mu Lee, Ching-Fang Tseng, and Chih-Yi Liu “Resistance Transition in NiO Thin Film and Its Temperature Dependence,” Ferroelectrics, 435, 155-160, 2012. (SCI)

26. Chih-Yi Liu*, Jen-Yen Ho, Jyun-Jie Huang, and Hung-Yu Wang, “Transient Current of Resistive Switching of a NiOx Resistive Memory”Japanese Journal of Applied Physics,vol. 51, pp.041101, 2012. (SCI)

25. Chih-Yi Liu* and Po-Wei Sung, “Different Resistive Switching Characteristics of a Cu/SiO2/Pt Structure,” Japanese Journal of Applied Physics, vol. 50, pp.091101, 2011. (SCI)

24. Chih-Yi Liu, Min-Hang Weng*, and Jyun-Min Lin, “Rapid Thermal Treatment for Improving Thermal Processing Stability of Ar-implanted Surface Passivated High-Resistivity Silicon,” IEEE Microwave and Wireless Components Letters, vol. 21, pp.365-367, 2011. (SCI)

23. Chun-Hung Lai*, Chia-Hung Chen, and Chih-Yi Liu, “Resistive switching and current conduction for thermally grown NiO thin film,” Materials Science Forum, vol. 687, pp.163-166, 2011. (EI)

22. Chih-Yi Liu*,Po-Wei Sung, Chun-Hung Lai, andHung-Yu Wang “Resistive Switching Characteristics of Cu/SiO2/Pt Structure” Materials Science Forum, vol. 687, pp.167-173, 2011. (EI)

21. Chih-Yi Liu*,Yu-Chen Li, Chun-Hung Lai, andShih-Kun Liu “Influence of SiO2 Layer on Resistive Switching Properties of SiO2/CuxO Stack Structure ” Materials Science Forum, vol. 687, pp.106-111, 2011. (EI)

20. Chih-Yi Liu*, Yung-Hung Huang, Jen-Yen Ho, and Chun-Chieh Huang,”Retention Mechanism of Cu-doped SiO2-based Resistive Memory,” Journal of PhysicsD: Applied Physics, vol. 44, pp.205103-1~205103-4, 2011.(SCI)

19. Chih-Yi Liu* and Jing-Ming Hsu, “Effect of Ultraviolet Illumination on the Resistive Switching Properties of CuxO Thin Film,” Japanese Journal of  Applied Physics, vol. 49, pp.084202-1~084202-3, 2010. (SCI)

18. Chih-Yi Liu* and Jing-Ming Hsu, “Dispersion Improvement of Unipolar Resistive Switching Ni/CuxO/Cu Device by Bipolar Operation Method,” Microelectronic Engineering, vol. 87, pp.2504~2507, 2010. (SCI)

17. Chih-Yi Liu*, Xin-Jie Lin, Hung-Yu Wang, and Chun-Hung Lai, “Improved Resistive Switching Dispersion of NiOx Thin Film by Cu-Doping Method,” Japanese Journal of Applied Physics,vol. 49, pp.056507-1~056507-4, 2010. (SCI)

16. Hung-YuWang*, Chih-Yi Liu, and Sheng-Hsiung Chang, “New Nullor-Mirror Equivalences,” AEU-International Journal of Electronics and Communications,vol. 64, pp.828~832, 2010. (SCI)

15. Chun-Hung Lai*, Chih-Yi Liu, andTseung-Yuen Tseng, “Conduction Behavior of V-SrZrO3 Thin Film Showing Resistive Switching,” Ferroelectrics, vol. 385, pp.21-26, 2009. (SCI)

14. Chih-Yi Liu*, Bo-Chang Zhuang, Chun-Hung Lai, and Jyun-Min Lin, “Parasitic Effect of the (Ba,Sr)TiO3 Thin Film for Tunable Microwave Device Application,”Ferroelectrics, vol. 383, pp.119-126, 2009.(SCI)

13. Chih-Yang Lin, Chih-Yi Liu, Chun-Chieh Lin, and Tseung-Yuen Tseng*, “Current Status of Resistive Nonvolatile Memory”, Journal of Electroceramics, vol. 21, pp.61-66, 2008. (SCI)

12. Chih-Yi Liu and Tseung-Yuen Tseng*, “Resistance Switching Properties of the Sol-Gel Derived SrZrO3 Based Memory Thin Films,” J. Phys. D: Appl. Phys., vol. 40, pp.2157-2161, 2007. (SCI)

11. Chih-Yi Liuand Tseung-Yuen Tseng*, “Study of SrTiO3 gate dielectric,” Materials Research Society (MRS) Fall Meeting Proceeding, 966E, T12-04, 2006. (EI)

10. Chih-Yi Liu, Arthur Wang, Wen-Yueh Jang, and Tseung-Yuen Tseng, “Electrical properties of resistance switching V-doped SrZrO3 films on textured LaNiO3 bottom electrodes” J. Phys. D: Appl. Phys., vol. 39, pp.1156-1160, 2006. (SCI)

9. Chih-Yi Liu, Chun-Chieh Chuang, Jian-Shian Chen, Arthur Wang, Wen-Yueh Jang,Jien-Chen Young, Kuang-Yi Chiu and Tseung-Yuen Tseng, “Memory Effect of Sol-Gel Derived V-doped SrZrO3 Thin Films,”Thin Solid Films, vol. 494, pp.287-290, 2006. (SCI)

8. Kampurath P. Jayadevan, Chih-Yi Liu, and Tseung-Yuen Tseng, “Surface Chemical and Leakage Current Density Characteristics of Ag-Ba0.5Sr0.5TiO3 Nanocomposite Thin Films,” Journal of the American Ceramic Society, vol. 88, pp.2456-2460, 2005. (SCI)

7. Chih-Yi Liu, Pei-Hsun Wu, Arthur Wang, Wen-Yueh Jang, Jien-Chen Young, Kuang-Yi Chiu, and Tseung-Yuen Tseng, “Bistable Resistive Switching of a Sputter-Deposited Cr-doped SrZrO3 Memory Film,”IEEE Electron Device Letters, vol. 26, pp.351-353, 2005. (SCI, EI)

6. Chih-Yi Liuand Tseung-Yuen Tseng, “Correlation between Deep Depletion and Current-Voltage Saturation of SrTiO3 Gate Dielectric Capacitor,” Ceramics International, vol. 30, pp.1101-1106, 2004. (SCI)

5. Kampurath P. Jayadevan, Chih-Yi Liu, and Tseung-Yuen Tseng, “Dielectric Characteristics of Nanocrystalline Ag-Ba0.5Sr0.5TiO3 Composite Thin Films,” Applied Physics Letters, vol. 85, pp.1211-1213, 2004. (SCI)

4. Chih-Yi Liu, Bo-Yang Chen, and Tseung-Yuen Tseng, “Deep Depletion Phenomenon of SrTiO3 Gate Dielectric Capacitor,” Journal of Applied Physics, vol.95, pp.5602-5607, 2004. (SCI)

3. Chih-Yi Liuand Tseung-Yuen Tseng, “The Electrical Property of Sputtered SrTiO3 Gate Dielectric,” Journal of the European Ceramic Society, vol.24, pp.1449-1453, 2004. (SCI)

2. Chih-Yi Liu, Hang-Ting Lue and Tseung-Yuen Tseng, “Effects of Nitridation of Silicon and Repeated Spike Heating on the Electrical Properties of SrTiO3 Gate Dielectrics,” Applied Physics Letters, vol. 81, pp.4416-4418, 2002. (SCI)

1. Hang-Ting Lue, Chih-Yi Liu, and Tseung-Yuen Tseng, “An Improved Two-Frequency Method of Capacitance Measurement for the High-k Gate Dielectrics,”IEEEElectron Device Letters, vol. 23, pp.553-555, 2002. (SCI, EI)

 

Ｂ.國際會議論文

28. Chih- Yi Liu*,Chia-Yu Yang, Hu-Guan Chiu, Dong-Han Du, Zhi-Lin Lee, “Analog Resistive Switching and Synaptic Behavior of Ni/TiOx/TiOy/TiN Structures for Artificial Intelligence Computing” The 17th International Symposium on Sputtering & Plasma Processes (ISSP2024), Kyoto, Japan, July. 2-5, 2024.

27. C. Y. Liu*,C. H. Kung, Y. C. Wang, Y. J. Lin, "Write-Once-Read-Many-Times Behaviors of ITO-based Structures" The 15th International Symposium on Sputtering & Plasma Processes (ISSP2019), Kanazawa, Japan, June. 11-14, 2019.

26. C. Y. Liu*, W. W. Chih, "Effect of nitrogen-modified Ti electrode on resistive memory properties of ITO-based point-contact structure," ThinFilms2018, Shenzhen P.R. China, Jul. 17-20, 2018.

25. C. Y. Liu*, Y. X. Zhang, C. P. Yang, C. H. Lai, M. H. Weng, C. S. Ye, and C. K. Huang, “Effect of a graphene oxide (GO) layer on the resistive memory properties of a Cu/GO/SiO2/Pt structure,” ICICE2016, Shaanxi, P.R. China, Nov. 5-10, 2016.

24. C. Y. Liu*, M. H. Tsai, and M. S. Wu, and C. H. Lai, “Microwave Dielectric Properties of B2O3-added Li2MgTiO4 Ceramics for LTCC Applications,” 2015 International Conference on Innovation, Communication and Engineering (ICICE2015), Hunan, China, Oct. 23-28, 2015.

23. C. Y. Liu*, K. C. Chiang, and C. H. Lai, Resistive memory properties of an electrochemical SiO2-based device without an active electrode, The 13th International Symposium on Sputtering & Plasma Processes (ISSP2015), Kyoto, Japan, Jul. 8-10, 2015.

22. C. Y. Liu*, Z. Y. Huang, and C. H. Lai, "CF4 Plasma Treatment of Tungsten Bottom Electrode of Cu/SiOx/W Structure for Resistive Memory Applications," ThinFilms2014, Chongqing, China, Jul. 15-18, 2014.

21. Chih-Yi Liu*, Yueh-Ying Tsai, and Chun-Hung Lai, “Effect of Plasma Treatment of Resistive Layer on a Cu/SiOx/Pt Memory Device,” ISSP2013: The 12th International 　Symposium on sputtering & Plasma Processes, Kyoto, Japan, Jul, 2013.

20. Chih-Yi Liu*, Yueh-Ying Tsai, Shih-Kun Liu, and Yung-Hung Huang, “Retention Failure Mechanism of Low Resistance-Statesofa Cu-doped SiO2 Resistive Memory,” The 8th Asian Meeting on Ferroelectrics (AMF-8), Pattaya, Thailand, Dec, 2012.

19. Chih-Yi Liu*, Chao-Han Lin, Jyun-Jie Huang, and Jen-Yen Ho, “Simulation of the Transient Current of NiO Resistive Memory during the Switching Process,” The 8th Asian Meeting on Ferroelectrics (AMF-8), Pattaya, Thailand, Dec, 2012.

18. Chun-Hung Lai*, Chih-Yi Liu, Cheng-Hsing Hsu, Yi-Mu Lee, Jenn-Sen Lin, and Hsiwen Yang “Effect of firing atmosphere and bottom electrode on resistive switching mode in TiO2 thin film” TACT 2011 International Thin Films Conference, Kenting, Taiwan, Nov.20-23, 2011.

17. Chih-Yi Liu*, Jyun-Jie Huang, and Chun-Hung Lai, “Resistive Switching Characteristics of a Pt Nanoparticle-Embedded SiO2-based Memory,” TACT 2011 International Thin Films Conference, Kenting, Taiwan, Nov.20-23, 2011.

16. Chun-Hung Lai*, Chia-Hung Chen, and Chih-Yi Liu, “Resistive switching and current conduction for thermally grown NiO thin film,” 11th IUMRS International Conference in Asia, JP40, Qingdao, China, Sep. 25-28, 2010.

15. Chih-Yi Liu*, Po-Wei Sung, Chun-Hung Lai, and Hung-Yu Wang “Resistive Switching Characteristics of Cu/SiO2/Pt Structure,” 11th IUMRS International Conference in Asia, JP48, Qingdao, China, Sep. 25-28, 2010.

14. Chih-Yi Liu*, Yu-Chen Li, Chun-Hung Lai, and Shih-Kun Liu, “Influence of SiO2 Layer on Resistive Switching Properties of SiO2/CuxO Stack Structure” 11th IUMRS International Conference in Asia, JP10, Qingdao, China, Sep. 25-28, 2010.

13. Chun-Hung Lai*, Chia-Hung Chen, Chih-Yi Liu, and Y. M. Lee, “Two bistable conduction states in SiO2 thin film induced by different forming conditions,” 7th Asian Meeting on Ferroelectricity (AMF-7) and the 7th Asian Meeting on Electroceramics (AMEC-7), Jeju island, Korea, June 28-July 1, 2010.

12. Chih-Yi Liu* and Po-Wei Sung, “Investigation of Resistive Switching Characteristics of Cu/SiO2/Pt Structure by Different Operation and Sweeping Methods,” 7th Asian Meeting on Ferroelectricity (AMF-7) and the 7th Asian Meeting on Electroceramics (AMEC-7), Jeju island, Korea, June 28-July 1, 2010.

11. Chun-Hung Lai*, Chih-Yi Liu, Y. M. Lee, “Investigation of the turn-on voltage for thermally grown NiO resistive-switching thin film,” TACT 2009 International Thin Films Conference, C062-P, Taipei, Taiwan, Dec. 14-16, 2009.

10. Chih-Yi Liu* and Po-Wei Sung, “Resistive Switching Behaviors of SiO2 Thin Film with Cu Top Electrode,” TACT 2009 International Thin Films Conference, C004-P, Taipei, Taiwan, Dec. 14-16, 2009.

9. Chih-Yi Liu* and X. J. Lin, “Influences of Size Area and Compliance Current on Resistive Switching Properties with Cu/NiOx/Pt Structure,” International Electron Devices and Materials Symposia (IEDMS), GC34, Taoyuan, Taiwan, Nov. 19-20, 2009.

8. Y. J. Wang*, R. Y. Yang, Chih-Yi Liu, and M. H. Weng, “Effect of Annealing Time on the Poly-SiGe by Aluminum Induced Crystallization at a Low Temperature of 400 °C,” 2008 International Symposium on Nano Science and technology, Tainan, Taiwan, Nov. 7, 2008.

7.  Chih-Yi Liu*, Bo-Chang Zhuang, Chun-Hung Lai, and Jyun-Min Lin, “Parasitic Effect of the (Ba,Sr)TiO3 Thin Film for Tunable Microwave Device Application,” The 6th Asian Meeting on Ferroelectrics (AMF-6), P-3-3-02,Taipei, Taiwan, Aug. 2~6, 2008.

6.  Chun-Hung Lai*, Chih-Yi Liu, C. H. Hsu, and Tseung-Yuen Tseng, “Resistive Switching Behavior in V-SrZrO3 Sputter-Deposited Thin Films,” The International Conference on Metallurgical Coatings and Thin Films (ICMCTF), San Diego, California, USA, Apr. 23-27, 2007.

5.  Chih-Yi Liu and Tseung-Yuen Tseng*, “Study of SrTiO3 gate dielectric,” MRS Fall Meeting, T12.4, Boston, MA, USA, Nov 27 - Dec 1, 2006.

4. Chih-Yang Lin, Chih-Yi Liu, Chun-Chieh Lin, and Tseung-Yuen Tseng*, “Current status of resistive nonvolatile memories,” 4th Asian Meeting on Electroceramics, Hangzhou, China, Jun. 27-30, 2005.

3. Chih-Yi Liu, Chun-Chieh Chuang, Jian-Shian Chen, Arthur Wang, Wen-Yueh Jang,Jien-Chen Young, Kuang-Yi Chiu, and Tseung-Yuen Tseng*, “Memory Effect of Sol-Gel Derived V-doped SrZrO3 Thin Films,” The International Conference On Metallurgical Coatings And Thin Films (ICMCTF), H3-8, San Diego, California, USA, May 2-6, 2005.

2.Chih-Yi Liu and Tseung-Yuen Tseng*, “Correlation between Deep Depletion and Current-Voltage Saturation of SrTiO3 Gate Dielectric Capacitor,” Abstract of International Conference on Materials for Advanced Technology (ICMAT), Singapore, Dec. 7-12, 2003.

1. Chih-Yi Liu and Tseung-Yuen Tseng*, “Electrical properties of SrTiO3 gate dielectric,” Abstract of Electroceramics VIII, Roma, Aug. 25-28, 2002.

 

C.專利

8.劉志益, 江崑祺, 林盟崇, “未採用活性電極之電阻式記憶體及其製造方法,”中華民國發明專利,證書號：I611404，公告日：中華民國 107年1月11日。

7.劉志益,黃正耀,戴士展,“具解離緩衝層之電阻式記憶體構造及其製造方法,”中華民國發明專利,證書號：I569487，公告日：中華民國 106年2月1日。

6.劉志益,黃正耀,“記憶體之電極改善方法及其構造,” 中華民國發明專利, 證書號：I571972，公告日：中華民國 106年2月21日。

5.劉志益,林釗漢,黃正耀,“記憶體之改善方法及其構造,” 中華民國發明專利, 證書號：I470785，公告日：中華民國 104年01月21日。

4.T. Y. Tseng, Chih-Yi Liu, C. C. Chuang, “Method for Non-volatile Memory Fabrication,” US Patent: US7459371, 公告日：2008/12/2。

3.Tseung-Yuen Tseng, Chih-Yi Liu, Pei-Hsun Wu, “Nonvolatile memory and fabrication method thereof,” US patent: US7323733B2, 公告日:2008/1/29。

2.曾俊元, 劉志益, 莊俊傑, “非揮發性記憶體的製造方法,”中華民國專利, 證書號：I255018, 公告日：2006/5/11。

1.曾俊元, 劉志益, 吳沛勳, “非揮發性記憶體及其製作方法,” 中華民國專利,證書號：I246186；公告日：2005/12/21。

　

D.國內期刊論文

1.  劉志益, 曾俊元, “應用於微波可調變元件之鐵電薄膜材料,” 中華民國陶業研究學會會刊,第二十二卷,第三期,pp.10~19, 2003.

2.  劉志益, 曾俊元, “電阻式非揮發性記憶體之近期發展,” 電子月刊, vol. 117, pp.182-189, 2005.

3.  莊柏昌, 劉志益, “新世代電阻式非揮發性記憶體之技術發展,” 中工高雄會刊, 第15卷, 第三期, pp.31~35, 2008.

　

 

E.國內會議論文

25. 周子翔, 吳孟昕, 戴士展, 劉志益*（2015年05月）。不同氣氛環境下矽基電阻記憶元件之特性探討。第十三屆微電子技術發展與應用研討會，高雄。

24. 戴士展,周子翔,吳孟昕,劉志益*（2015年05月）。相對濕度對銅/二氧化矽/白金結構之記憶特性影響。第十三屆微電子技術發展與應用研討會，高雄。

23. 林芳妤, 劉世崑*, 劉佳鴻, and 劉志益（2014年11月）。使用均勻阻抗共振器設計用於4G行動通訊之多工器。2014光電與通訊工程應用研討會，　　Kaohsiung。

22. 黃啟育,張煜軒,白昌宗, and劉志益*, “氧化石墨烯薄膜作為電阻式記憶體之特性研究,” 2013年奈米技術與材料研討會, 彰化, 2013.

21. 秦國豪,白昌宗,張昱軒, and劉志益*, “氧化石墨烯薄膜之電阻記憶特性探討,” 2013光電與通訊工程應用研討會, 高雄, 2013.

20. 蘇鴻懿,蔡岳穎, and劉志益*, “利用氧電漿處理之二氧化矽電阻式記憶體特性研究,” 第十一屆微電子技術發展與應用研討會, 高雄, 2013.

19. 鄒玠荏,蔡岳穎,黃正耀, and 劉志益*, “氧化鉿之電阻記憶特性探討,” 2012年中國材料科學學會年會, 雲林, 2012.

18. 鄒玠荏,黃正耀, 蔡秉洸, and 劉志益*, “Effect of V2O5 Additiveon Microwave Dielectric Characteristics of Li2ZnTi3O8 Ceramics,” 2012光　　電與通訊工程研討會, 高雄, 2012.

17. 黃正耀,康辰瑋,施雅茹, and 劉志益*, “二氧化矽薄膜應用於透明電阻式記憶體” 2011民生電子研討會,台中, Nov. 11, 2011.

16. 蔡明修,黃正耀,康辰瑋, and 劉志益*,“鋁緩衝層對二氧化矽電阻記憶體之特性影響,”2011電子工程技術研討會, 高雄, Jun. 10, 2011.

15. 黃俊傑,施雅茹,黃正耀,康辰瑋, and劉志益*, “二氧化矽透明電阻式記憶體之特性研究” 第九屆微電子技術發展與應用研討會, 2011.

14. Chih-Yi Liu*, B. G. Tsai, and S. H. Liu “Microwave Dielectric Properties of Li2ZnTi3O8 Ceramics” Symposium on Nano Device 　　Technology (SNDT), Apr.21-22,2011.

13. 潘柏勳,蔡岳穎,羅培辰,宋柏緯,and 劉志益*, “二氧化矽薄膜之電阻記憶體溫度特性研究,” 中國材料科學學會年會, 03-0203, 高雄, Nov. 19~20, 　　2010.

12. 施雅茹,許峻銘, and 劉志益*,“熱氧化法製備氧化銅薄膜之電阻記憶特性研究,” 銘傳大學2010國際學術研討會, March, 2010.

11. Chih-Yi Liu* and Y. H. Huang, “Resistive Switching Properties of Cu/SiO2/ITO Structure,” Symposium on Nano Device Technology 　　(SNDT), May. 4-5, 2010.

10. 王昱傑*, 楊茹媛, 劉志益, and 翁敏航, “外加電場與退火製程對奈米鋁誘發非晶矽薄膜成多晶矽之微結構探討,” 中國材料科學學會年會, 0798,花　　蓮,Nov. 26~28, 2009.

9. 何任晏, 林新傑, 林華恩, and 劉志益*,利用後金屬退火改善氧化鎳薄膜之電阻切換分散特性,中國材料科學學會年會,0131, 花蓮, Nov. 26~28, 2009.

8. 賴韋安, 劉志益*, “電漿清洗於改善BGA封裝製程中金線銲接強度之分析,” 第七屆微電子技術發展與應用研討會, 2009.

7. 鄭博仁,劉志益*, “鈦酸鍶鋇薄膜於電場輔助退火下之特性探討,” 第七屆微電子技術發展與應用研討會, 2009.

6. 李禹禛, 黃俊傑, and 劉志益*, “電漿氧化法製備氧化銅薄膜之電阻切換特性研究,” 第七屆微電子技術發展與應用研討會, 2009.

5. R. Y. Yang, Y. J. Wang, Chih-Yi Liu, and M. H. Weng, “AFM and Hall analysis of nano gold induced crystallization of amorphous Si-Ge 　　films at different annealing time,” Symposium on Nano Device Technology (SNDT), Apr. 29-30, 2009.

4. Chih-Yi Liu* and X. J. Lin, “Investigation of the Resistive Switching Properties of the NiOx Thin Film,” Symposium on Nano Device 　　Technology (SNDT), Apr. 29-30, 2009.

3. 林俊名, 林華恩, 黃俊傑, 許峻銘, and 劉志益, “氧化亞銅薄膜之電阻切換特性研究”銘傳大學2009 國際學術研討會, March, 2009.

2. 許峻銘, 劉志益*, 莊柏昌, “氧化銅薄膜之電阻切換特性研究,” 第六屆微電子技術發展與應用研討會, pp.31~32, May 16, 2008.

1. 莊柏昌, 劉志益*, “鈦酸鍶鋇薄膜應用於可調變微波元件之特性研究”銘傳大學2008國際學術研討會, March, 2008.